Time-resolved optical second harmonic generation study of the electric field dynamics at a metal-semiconductor interface

Time-resolved optical second harmonic generation study of the electric field dynamics at a metal-semiconductor interface

The time evolution of the electric field at a Schottky barrier interface due to above bandgap excitation is directly measured using time-resolved optical second harmonic generation (SHG). The results are found to be in good qualitative agreement with Monte Carlo simulations. Sub-picosecond decay tim...

Full description

Saved in:
Bibliographic Details
Published in:Surface science Vol. 352; pp. 807 - 811
Main Authors: de Jong, W., van Etteger, A.F., van't Hof, C.A., van Hall, P.J., Rasing, Th
Format: Journal Article
Language:English
Published: Elsevier B.V 15-05-1996
Subjects:
Carrier dynamics
Gallium arsenide
Schottky barrier
Second harmonic generation
Carrier dynamics
Second harmonic generation
Gallium arsenide
Schottky barrier
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The time evolution of the electric field at a Schottky barrier interface due to above bandgap excitation is directly measured using time-resolved optical second harmonic generation (SHG). The results are found to be in good qualitative agreement with Monte Carlo simulations. Sub-picosecond decay times are observed that are dependent on the excitation powers.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(95)01280-X