ULSI-process demands of contamination control on ion implantation
High-yield processing based on contamination control is one of the key factors counteracting the explosive cost-increase in the ULSI manufacture. By considering a yield model in conjunction with contamination experiments so far reported, a measure of the torelable levels of particulate and chemical...
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| Published in: | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 96; no. 1; pp. 62 - 67 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Elsevier B.V
01-03-1995
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| Online Access: | Get full text |
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| Summary: | High-yield processing based on contamination control is one of the key factors counteracting the explosive cost-increase in the ULSI manufacture. By considering a yield model in conjunction with contamination experiments so far reported, a measure of the torelable levels of particulate and chemical contaminants for the future processing is presented. In the case of ion-implantation processing, considerable efforts will be necessary to meet the future demands of contamination control. In addition, it is pointed out that contamination control on the backside surfaces is important and that energetic carbon contamination should receive more attention. |
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| ISSN: | 0168-583X 1872-9584 |
| DOI: | 10.1016/0168-583X(94)00455-2 |