An in-depth analysis on the switching response and impedance curves of n-si/In2O3 NW/Ag NPs/In based devices by a double-step glancing angle deposition technique

• Published in: Physica. B, Condensed matter Vol. 660; p. 414886
• Main Authors: Nath, Amitabha, Sarkar, Mitra Barun
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-07-2023
• Subjects: GLAD; Impedance; Nanoparticles; Series circuit model; Switching response; Nanoparticles; GLAD; Impedance; Series circuit model; Switching response
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2023.414886

Silver (Ag) nanoparticles (NPs) were coated upon indium oxide (In2O3) nanowires (NW) by a double-step glancing angle deposition (GLAD) technique. The study focuses on the experimental analysis of current (I) versus voltage (V), current (I) versus time (t), as well as impedance (Zexp) versus voltage (V) curves for n-Si/In2O3 NW/Ag NPs/In based devices with a sweeping voltage of ±10 V at room temperature in different frequency responses varying from 100 Hz to 2 MHz. The n-Si/In2O3 NW/Ag NPs/In based device showed faster rise and fall time of 0.13 s and 0.12 s than the other devices due to oxygen-related defect states. The presence of Ag NPs also improved oxygen related defect states, resulting in high impedance value for n-Si/In2O3 NW/Ag NPs/In based device. The series circuit model (SCM) was used to derive the theoretical investigations of impedances, indicating the n-Si/In2O3 NW/Ag NPs/In based device can be used in nanoelectronics applications.
•Experimental analysis of switching responses (current vs. time) for the n-Si/In2O3 TF/In, n- Si/In2O3 NW/In, and n-Si/In2O3 NW/Ag NPs/In based devices.•Experimental impedance (Zexp) versus voltage (V) curves for the n-Si/In2O3 TF/In, n-Si/In2O3 NW/In, and n-Si/In2O3 NW/Ag NPs/In based devices.•At 2 MHz frequency response, n-Si/In2O3 NW/Ag NPs/In based device shows ∼5.60 fold and ∼4.70 fold enhancement in impedances compared to the n-Si/In2O3 TF/In and n-Si/In2O3 NW/In based devices, respectively.•The series circuit model (SCM) has been theoretically investigated to clearly understand the experimental outcomes of n-Si/In2O3 NW/Ag NPs/In based devices.