Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing
•Growth of Ti3SiC2 thin films onto 4H-SiC (0001) 8° and 4°-off substrates.•High temperature application for SiC ohmic contact.•Thermal annealing of Ti-Al layers.•Influence of the composition in the TixAl1−x alloy was investigated.•Influence of the annealing temperature (900–1200°C) after deposition...
Saved in:
Published in: | Applied surface science Vol. 347; pp. 186 - 192 |
---|---|
Main Authors: | , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Elsevier B.V
30-08-2015
Elsevier |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | •Growth of Ti3SiC2 thin films onto 4H-SiC (0001) 8° and 4°-off substrates.•High temperature application for SiC ohmic contact.•Thermal annealing of Ti-Al layers.•Influence of the composition in the TixAl1−x alloy was investigated.•Influence of the annealing temperature (900–1200°C) after deposition was investigated.•The structural investigations were mainly performed by using X-ray diffraction (XRD), and transmission electron microscopy (TEM).•Elementary and profile characterization were performed using X-Ray photoelectron spectroscopy (XPS).
The growth of Ti3SiC2 thin films was studied onto 4H-SiC (0001) 8° and 4°-off substrates by thermal annealing of TixAl1−x (0.5≤x≤1) layers. The annealing time was fixed at 10min under Argon atmosphere. The synthesis conditions were also investigated according to the annealing temperature (900–1200°C) after deposition. X-Ray Diffraction (XRD) and Transmission Electron Microscope (TEM) show that the layer of Ti3SiC2 is epitaxially grown on the 4H-SiC substrate. In addition the interface looks sharp and smooth with evidence of interfacial ordering. Moreover, during the annealing procedure, the formation of unwanted aluminum oxide was detected by using X-Ray Photoelectron Spectroscopy (XPS); this layer can be removed by using a specific annealing procedure. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2015.04.077 |