Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

•Growth of Ti3SiC2 thin films onto 4H-SiC (0001) 8° and 4°-off substrates.•High temperature application for SiC ohmic contact.•Thermal annealing of Ti-Al layers.•Influence of the composition in the TixAl1−x alloy was investigated.•Influence of the annealing temperature (900–1200°C) after deposition...

Full description

Saved in:
Bibliographic Details
Published in:Applied surface science Vol. 347; pp. 186 - 192
Main Authors: Abi-Tannous, T., Soueidan, M., Ferro, G., Lazar, M., Toury, B., Beaufort, M.F., Barbot, J.F., Penuelas, J., Planson, D.
Format: Journal Article
Language:English
Published: Elsevier B.V 30-08-2015
Elsevier
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:•Growth of Ti3SiC2 thin films onto 4H-SiC (0001) 8° and 4°-off substrates.•High temperature application for SiC ohmic contact.•Thermal annealing of Ti-Al layers.•Influence of the composition in the TixAl1−x alloy was investigated.•Influence of the annealing temperature (900–1200°C) after deposition was investigated.•The structural investigations were mainly performed by using X-ray diffraction (XRD), and transmission electron microscopy (TEM).•Elementary and profile characterization were performed using X-Ray photoelectron spectroscopy (XPS). The growth of Ti3SiC2 thin films was studied onto 4H-SiC (0001) 8° and 4°-off substrates by thermal annealing of TixAl1−x (0.5≤x≤1) layers. The annealing time was fixed at 10min under Argon atmosphere. The synthesis conditions were also investigated according to the annealing temperature (900–1200°C) after deposition. X-Ray Diffraction (XRD) and Transmission Electron Microscope (TEM) show that the layer of Ti3SiC2 is epitaxially grown on the 4H-SiC substrate. In addition the interface looks sharp and smooth with evidence of interfacial ordering. Moreover, during the annealing procedure, the formation of unwanted aluminum oxide was detected by using X-Ray Photoelectron Spectroscopy (XPS); this layer can be removed by using a specific annealing procedure.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2015.04.077