Total gamma dose characteristics of CMOS devices in SOI structures based on oxidized porous silicon

• Published in: IEEE transactions on nuclear science Vol. 44; no. 5; pp. 1719 - 1723
• Main Authors: Bondarenko, V.P., Bogatirev, Y.V., Colinge, J.P., Dolgyi, L.N., Dorofeev, A.M., Yakovtseva, V.A.
• Format: Journal Article
• Language: English
• Published: IEEE 01-10-1997
• Subjects: Bonding; CMOS technology; Doping; Electric variables; Integrated circuit technology; Laboratories; Optical waveguides; Oxidation; Ring oscillators; Silicon on insulator technology
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.633424

The electrical characteristics of complementary metal-oxide-semiconductor (CMOS) transistors and ring oscillators fabricated in porous silicon silicon-on-insulator (SOI) structures are presented before and after gamma irradiation. P-channel SOI/MOS transistors exhibit a front-gate threshold voltage shift of -0.2 and -0.55 V after exposure to doses of 1 and 10 Mrad(Si), respectively, under floating bias conditions, which are different from worst case conditions. For n-channel transistors the corresponding values are -0.1 and -0.2 V. The additional bottom and sidewall B/sup +/ ion implants with a dose of 2/spl times/10/sup 13/ cm/sup -2/ are found to be effective to prevent leakage current along the n-channel transistor bottom and sidewalls. SOI/CMOS ring oscillators present a 40% higher speed in comparison with the same bulk CMOS devices and continued stable operation under a supply voltage of 3-5.5 V, for gamma irradiation up to 10 Mrad(Si), and an operating temperature ranging from 77 to 400 K.