Measurement of mass attenuation coefficients for holmium doped and undoped layered semiconductors InSe at different energies and the validity of mixture rule for crystals around the absorption edge

• Published in: Journal of quantitative spectroscopy & radiative transfer Vol. 102; no. 3; pp. 343 - 347
• Main Authors: Erzeneoğlu, S., İçelli, O., Gürbulak, B., Ateş, A.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-12-2006
• Subjects: Energy dispersive X-ray spectrometry; Mass attenuation coefficients; Semiconductors; Semiconductors; Energy dispersive X-ray spectrometry; Mass attenuation coefficients
• ISSN: 0022-4073; 1879-1352
• DOI: 10.1016/j.jqsrt.2005.06.001

The mass attenuation coefficients of InSe and InSe having different holmium concentrations were measured in the energy region 15.746–40.930
keV using a Si(Li) detector. InSe and InSe:holmium(0.0025), InSe:holmium(0.0050), InSe:holmium(0.025) and InSe:holmium(0.05) crystals were grown by the Bridgman–Stocbarger method. The measured values are compared with the theoretical ones obtained using WinXcom which is a Windows version of XCOM. The measurement of mass attenuation coefficients of ternary semiconductors is very important because of its use in technology.