Modeling the simultaneous effects of thermal and polarization in InGaN/GaN based high electron mobility transistors

• Published in: Optik (Stuttgart) Vol. 207; p. 163883
• Main Authors: Belmabrouk, Hafedh, Chouchen, Bilel, Feddi, El Mustapha, Dujardin, Francis, Tlili, Iskander, Ben Ayed, Mossaad, Gazzah, Mohamed Hichem
• Format: Journal Article
• Language: English
• Published: Elsevier GmbH 01-04-2020
• Subjects: 2DEG; InGaN/GaN; Polarization charge; Temperature effect; Temperature effect; InGaN/GaN; 2DEG; Polarization charge
• ISSN: 0030-4026; 1618-1336
• DOI: 10.1016/j.ijleo.2019.163883

In this paper, we propose the modeling of the two-dimensional electron gas (2DEG) density in InGaN/GaN hetero-interface based high electron mobility transistors (HEMT). The Schrodinger-Poisson equations, as well as the polarization-induced charges, have been utilized. The temperature effect on the effective mass, band gap energy, dielectric constant and the lattice thermal expansion is taken into account. Our numerical calculation shows that the 2DEG density decreases with temperature. This is due to the shrinkage of the conduction band offset at high temperatures. The improvement of the sheet carrier density and the carrier confinement at the InGaN/GaN hetero-interface based heterostructures is made at low temperature.