Dynamical control of electron states in double quantum dot

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 24; no. 3-4; pp. 217 - 221
• Main Authors: Burdov, Vladimir A., Solenov, Dmitry S.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-09-2004
• Subjects: Dynamical control; Electric field; Electron density; Occupation probability; Quantum dot; Quantum dot; 03.65.−w; Electric field; 03.65.Ge; 73.20.Dx; Occupation probability; Electron density; Dynamical control
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2004.04.038

Controllable electron dynamics in a double quantum dot has been investigated theoretically in the presence of strong sinusoidal electric field and monotonically varied bias voltage, applied to the structure. It is shown that the possibility to create controllable electron states strongly depends on the relation between Rabi frequency and typical reciprocal time of bias change. As follows from theoretical analysis, when time of bias change is the biggest temporal parameter of the problem, electron density can be fully relocated from one quantum dot to another under the action of both resonant sinusoidal field and slowly varied voltage. When the period of Rabi oscillations is much greater than the time of bias change, electron tunneling between two neighboring quantum dots becomes suppressed. In this case electron density stays in the quantum dot that was initially occupied.