MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications

• Published in: Applied materials today Vol. 5; pp. 209 - 214
• Main Authors: Nattermann, L., Ludewig, P., Knaub, N., Rosemann, N.W., Hepp, T., Sterzer, E., Jin, S.R., Hild, K., Chatterjee, S., Sweeney, S.J., Stolz, W., Volz, K.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-12-2016
• Subjects: Bismuth compounds; Characterization; Crystal morphology; Laser material; Metal organic chemical vapour deposition; Semiconducting III-V materials; Solar cells; Solar cells; Semiconducting III-V materials; Characterization; Metal organic chemical vapour deposition; Laser material; Bismuth compounds; Crystal morphology
• ISSN: 2352-9407; 2352-9415
• DOI: 10.1016/j.apmt.2016.09.018

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•Calculation of band gap and spin-orbit split-off energies of Ga(PAsBi) for different compositions.•Temperature-dependent PL and comparison with theory.•High-quality MOVPE growth of Ga(PAsBi).•Surface and interface investigations on Ga(PAsBi) on an atomic scale.•Comprehensive growth studies on Ga(PAs) and Ga(PAsBi) materials.
Dilute bismide Ga(PAsBi)-based structures are promising candidates for highly efficient optoelectronic applications, like the 1eV sub-cell in multi-junction solar cells or the active region in infra-red laser diodes. The band gap can be tuned independently from the lattice constant, which theoretically enables the deposition of lattice-matched layers in a wide range of band gap energies on GaAs substrate. In this work, firstly, the shifts in the band edge positions as a function of composition that are possible with the Ga(PAs(Bi)) alloy were estimated using the virtual crystal approximation and valence band anti-crossing theory. Secondly, systematic investigations on MOVPE growth of Ga(PAsBi) layers are presented. Finally, we show the first photoluminescence activity of quaternary Ga(PAsBi) and compare the experimental results to theory.