Electrical isolation of GaAs and AlGaAs/GaAs Quantum Cascade Lasers by deep hydrogen implantation

Ion implantation can be applied to form the electrical isolation in AlGaAs/GaAs Quantum Cascade Laser (QCL) instead of mesa etching. In this paper, we present in detail the designing of hydrogen implant isolation scheme, alongside with its verification and study of thermal stability by structural an...

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Bibliographic Details

Published in:	Materials science in semiconductor processing Vol. 74; pp. 88 - 97
Main Authors:	Kozubal, Maciej Artur, Szerling, Anna, Kosiel, Kamil, Myśliwiec, Marcin, Pągowska, Karolina, Jakieła, Rafał, Kruszka, Renata, Guziewicz, Marek, Barcz, Adam
Format:	Journal Article
Language:	English
Published:	Elsevier Ltd 01-02-2018
Subjects:	AlGaAs/GaAs Electrical isolation GaAs Hydrogen implantation Quantum Cascade Laser RBS/c AlGaAs/GaAs Electrical isolation Quantum Cascade Laser Hydrogen implantation RBS/c GaAs
Online Access:	Get full text
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