Analytical model for oblique ion reflection at the Si surface

• Published in: IEEE transactions on electron devices Vol. 35; no. 12; pp. 2323 - 2327
• Main Authors: Mizuno, T., Higuchi, T., Ishiuchi, H., Matsumoto, Y., Saitoh, Y., Sawada, S., Shinozaki, S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-12-1988; Institute of Electrical and Electronics Engineers
• Subjects: Analytical models; Capacitance; Capacitors; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping; Doping and impurity implantation in iii-v and ii-vi semiconductors; Exact sciences and technology; Gaussian distribution; Humans; Implants; Impurities; Physics; Random access memory; Reflection; Structure of solids and liquids; crystallography; Non metal; Ion implantation; Semiconductor materials; Phosphorus Atomic ions; Theoretical study; Irradiation; Silicon; Experimental study; Arsenic Atomic ions; Surface
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.8808

Experimental and analytical studies on oblique ion implantation into a Si trench sidewall are discussed. The observation that implanted ions at small incident angle are reflected at the trench sidewall cannot be explained by the conventional Gaussian distribution model. A simple analytical model for oblique ion reflection, considering the Rutherford scattering collision between implanted ions and the Si nucleus, is introduced. As the ion incident angle becomes smaller than 10 degrees , more and more ions are reflected at the trench sidewall. In addition, the reflection index of arsenic ions is larger than that of phosphorus ions.< >