AlxGa1−xAs/GaAs heterostructures with abnormally high mobility of charge carriers

• Published in: Materials science in semiconductor processing Vol. 38; pp. 107 - 112
• Main Authors: Seredin, P.V., Lenshin, A.S., Arsentiev, I.N., Tarasov, I.S.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-10-2015
• Subjects: A3B5; Abnormally high mobility of charge carriers; Epitaxial heterostructures; Semiconductors; Abnormally high mobility of charge carriers; A3B5; Semiconductors; Epitaxial heterostructures
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2015.04.015

Using structural and spectroscopic methods, we have studied epitaxial layers of AlxGa1−xAs solid solutions with n-conductivity obtained by means of MOCVD epitaxy. During carbon doping of AlxGa1−xAs solid solutions at 1.2–6.7*1017сm−3, the mobility for this concentration of impurities and composition was shown to be abnormally high and twice as high as the calculated value. It was assumed that the ordered position of carbon in a metal sublattice of the solid solution causes changes in the average distance between the ions of the impurities, i.e. an increase in the length of a free path of a charge carrier and thus of its mobility.
The identified effect has practical implications for different technological methods of increasing the performance of functional elements of the contemporary optoelectronic base. Physical properties of materials due to the use of the effects of an abnormally high mobility of charge carriers in the epitaxial layer of a heteropair opens up new possibilities in creating new AlxGa1−xAs -based structures.