Magnetic-field dependence of the hopping conduction of electrostatically disordered quasi-2D semiconductor systems under the conditions for the insulator-metal percolation transition

Lateral conductance G of the metal-nitride-oxide-silicon mesoscopic transistor structures with the inversion n channel and a relatively high (no less than 10 13 cm −2 ) concentration of integrated charges is studied versus magnetic field (up to 45 T) and potential of field electrode V g at a tempera...

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Bibliographic Details
Published in:	Journal of communications technology & electronics Vol. 54; no. 12; pp. 1413 - 1416
Main Authors:	Vedeneev, A. S., Kozlov, A. M., Bugaev, A. S.
Format:	Journal Article
Language:	English
Published:	Dordrecht SP MAIK Nauka/Interperiodica 01-12-2009 Springer Nature B.V
Subjects:	Communications Engineering Communications equipment Communications technology Dependence Electrodes Engineering Localization Magnetic fields Nanoelectronics Networks Semiconductors Studies Transistors Integrate Charge Electron Wave Function Percolation Cluster Negative Magnetoresistance Point Quantum Contact
Online Access:	Get full text
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