Magnetic-field dependence of the hopping conduction of electrostatically disordered quasi-2D semiconductor systems under the conditions for the insulator-metal percolation transition

• Published in: Journal of communications technology & electronics Vol. 54; no. 12; pp. 1413 - 1416
• Main Authors: Vedeneev, A. S., Kozlov, A. M., Bugaev, A. S.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-12-2009; Springer Nature B.V
• Subjects: Communications Engineering; Communications equipment; Communications technology; Dependence; Electrodes; Engineering; Localization; Magnetic fields; Nanoelectronics; Networks; Semiconductors; Studies; Transistors; Integrate Charge; Electron Wave Function; Percolation Cluster; Negative Magnetoresistance; Point Quantum Contact
• ISSN: 1064-2269; 1555-6557
• DOI: 10.1134/S1064226909120110

Lateral conductance
G
of the metal-nitride-oxide-silicon mesoscopic transistor structures with the inversion
n
channel and a relatively high (no less than 10
13
cm
−2
) concentration of integrated charges is studied versus magnetic field (up to 45 T) and potential of field electrode
V
g
at a temperature of 4.2 K. The characteristics of the saddle regions of the fluctuation electrostatic potential that form the mesoscopic percolation network as point quantum contacts are analyzed in the framework of the Landauer-Büttiker model. The measured features of the magnetic-field dependences of
G
in the low-inversion region (a transition from the positive magnetoresistive effect at
G
≤
e
2
/
h
to a relatively strong (about 100%) negative magnetoresistive effect with an increase in
V
g
) are related to structural modifications of percolation cluster under the action of the field effect. The dependences of
G
on magnetic field are in agreement with the dependences of
G
on
V
g
.