A new generation of X-ray detectors based on silicon carbide

We present experimental results on X-ray detectors based on Silicon Carbide (SiC). We demonstrate that SiC allows operating the detectors in a wide temperature range (up to 100°C) with performance, at high temperature, not attainable with any other semiconductor detector presently available. We have...

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Bibliographic Details

Published in:	Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 518; no. 1; pp. 433 - 435
Main Authors:	Bertuccio, Giuseppe, Casiraghi, Roberto, Cetronio, Antonio, Lanzieri, Claudio, Nava, Filippo
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-02-2004
Subjects:	Semiconductor radiation detectors Silicon Carbide X-ray detectors X-ray spectroscopy X-ray detectors Semiconductor radiation detectors Silicon Carbide X-ray spectroscopy
Online Access:	Get full text
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