A new generation of X-ray detectors based on silicon carbide
We present experimental results on X-ray detectors based on Silicon Carbide (SiC). We demonstrate that SiC allows operating the detectors in a wide temperature range (up to 100°C) with performance, at high temperature, not attainable with any other semiconductor detector presently available. We have...
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| Published in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 518; no. 1; pp. 433 - 435 |
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| Main Authors: | , , , , |
| Format: | Journal Article |
| Language: | English |
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Elsevier B.V
01-02-2004
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| Abstract | We present experimental results on X-ray detectors based on Silicon Carbide (SiC). We demonstrate that SiC allows operating the detectors in a wide temperature range (up to 100°C) with performance, at high temperature, not attainable with any other semiconductor detector presently available. We have realized several detectors on epitaxial 4H–SiC layer. The spectrometer shows ultra low noise due to the extremely low leakage current densities of SiC detectors: 15
pA/cm
2 at 27°C and 525
pA/cm
2 at 107°C. Noise levels of 366
eV FWHM at 27°C and 645
eV FWHM at 94°C, limited by the noise of the silicon front-end transistor, have been measured on
241Am spectra. |
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| AbstractList | We present experimental results on X-ray detectors based on Silicon Carbide (SiC). We demonstrate that SiC allows operating the detectors in a wide temperature range (up to 100°C) with performance, at high temperature, not attainable with any other semiconductor detector presently available. We have realized several detectors on epitaxial 4H–SiC layer. The spectrometer shows ultra low noise due to the extremely low leakage current densities of SiC detectors: 15
pA/cm
2 at 27°C and 525
pA/cm
2 at 107°C. Noise levels of 366
eV FWHM at 27°C and 645
eV FWHM at 94°C, limited by the noise of the silicon front-end transistor, have been measured on
241Am spectra. |
| Author | Bertuccio, Giuseppe Nava, Filippo Casiraghi, Roberto Cetronio, Antonio Lanzieri, Claudio |
| Author_xml | – sequence: 1 givenname: Giuseppe surname: Bertuccio fullname: Bertuccio, Giuseppe email: giuseppe.bertuccio@polimi.it organization: Department of Electronics Engineering and Information Science, Politecnico di Milano, P.za L. da Vinci 32, Milano 20133, Italy – sequence: 2 givenname: Roberto surname: Casiraghi fullname: Casiraghi, Roberto organization: Department of Electronics Engineering and Information Science, Politecnico di Milano, P.za L. da Vinci 32, Milano 20133, Italy – sequence: 3 givenname: Antonio surname: Cetronio fullname: Cetronio, Antonio organization: Alenia Marconi Systems, Via Tiburtina km12.400, I-00131 Roma, Italy – sequence: 4 givenname: Claudio surname: Lanzieri fullname: Lanzieri, Claudio organization: Alenia Marconi Systems, Via Tiburtina km12.400, I-00131 Roma, Italy – sequence: 5 givenname: Filippo surname: Nava fullname: Nava, Filippo organization: Physics Department, University of Modena, via Campi 213/A, 41100 Modena, Italy |
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| CitedBy_id | crossref_primary_10_1016_j_physb_2005_12_093 crossref_primary_10_1016_j_apsusc_2018_07_008 crossref_primary_10_1134_S1063785008030103 crossref_primary_10_1134_S1063782608010120 crossref_primary_10_1016_j_nima_2005_03_015 crossref_primary_10_1088_1748_0221_8_09_P09014 crossref_primary_10_1109_TNS_2006_875151 crossref_primary_10_1109_TNS_2016_2565439 crossref_primary_10_1016_j_nima_2009_11_037 crossref_primary_10_1016_j_nima_2015_04_002 crossref_primary_10_1088_1748_0221_7_09_P09005 crossref_primary_10_1016_j_nimb_2007_12_083 crossref_primary_10_1109_TNS_2006_875155 crossref_primary_10_1088_1748_0221_9_05_C05041 crossref_primary_10_1109_LPT_2023_3331753 crossref_primary_10_1007_s40995_021_01090_8 crossref_primary_10_1088_1748_0221_8_10_P10014 crossref_primary_10_1109_TNS_2014_2320943 crossref_primary_10_1116_6_0000829 crossref_primary_10_1088_0268_1242_26_4_045001 crossref_primary_10_1088_1748_0221_10_04_C04009 crossref_primary_10_1134_S1063782608090200 crossref_primary_10_1016_j_nima_2008_08_149 crossref_primary_10_1016_j_apsusc_2020_147801 crossref_primary_10_1103_PhysRevAccelBeams_22_052901 crossref_primary_10_1016_j_nima_2007_05_172 crossref_primary_10_1051_epjconf_201610605004 crossref_primary_10_1088_1748_0221_7_11_P11024 crossref_primary_10_1109_TNS_2004_825095 crossref_primary_10_1088_1748_0221_7_09_P09012 crossref_primary_10_1016_j_apsusc_2023_157708 crossref_primary_10_1016_j_nima_2012_01_009 crossref_primary_10_1088_1748_0221_10_07_P07009 |
| Cites_doi | 10.1109/TNS.2003.807855 10.1109/JPROC.2002.1021561 10.1109/23.775527 10.1109/JPROC.2002.1021563 10.1016/S0168-9002(99)00756-1 10.1109/23.915369 |
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| References | Nava, Vanni, Lanzieri, Canali (BIB4) 1999; 437 CREE Inc., Durham, NC 27703, USA. Bertuccio, Casiraghi, Nava (BIB5) 2001; NS-48 Clarke, Palmour (BIB2) 2002; 90 Bertuccio, Casiraghi (BIB7) 2003; NS-50 Dulloo, Ruddy, Seidel, Davison, Flinchbaugh, Daubenspeck (BIB3) 1999; NS-46 Cooper, Agarwal (BIB1) 2002; 90 Bertuccio (10.1016/j.nima.2003.11.050_BIB5) 2001; NS-48 Bertuccio (10.1016/j.nima.2003.11.050_BIB7) 2003; NS-50 Cooper (10.1016/j.nima.2003.11.050_BIB1) 2002; 90 10.1016/j.nima.2003.11.050_BIB6 Clarke (10.1016/j.nima.2003.11.050_BIB2) 2002; 90 Nava (10.1016/j.nima.2003.11.050_BIB4) 1999; 437 Dulloo (10.1016/j.nima.2003.11.050_BIB3) 1999; NS-46 |
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| Title | A new generation of X-ray detectors based on silicon carbide |
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