Under-surface observation of thin-film alumina on NiAl(100) with scanning tunneling microscopy
Scanning tunneling microscopy (STM) was used to investigate the oxide structures underlying the surface of alumina thin-film grown on NiAl(100). At a bias voltage (on the sample) below 2.0V, STM topography images of the alumina layer beneath the surface were obtained. A probe with depth of 2–8Å was...
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Published in: | Thin solid films Vol. 520; no. 11; pp. 3952 - 3959 |
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30-03-2012
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Abstract | Scanning tunneling microscopy (STM) was used to investigate the oxide structures underlying the surface of alumina thin-film grown on NiAl(100). At a bias voltage (on the sample) below 2.0V, STM topography images of the alumina layer beneath the surface were obtained. A probe with depth of 2–8Å was readily attained. The under-surface observation shows that the film consists of stacked layers of alumina whereas the layered alumina unnecessarily comprises entire θ-Al2O3 unit cells. The lattice orientation of the upper alumina layer differs from that of the lower one by 90° — the newly grown oxide structurally matching the horizontal oxide rather than the lower oxide. The results indicate a growth process competing with the typical mode of epitaxial growth for the growth of alumina film.
► STM images of alumina layers beneath the surface of alumina film/NiAl(100) obtained. ► A probe depth of 0.2–0.8nm is readily attained. ► The orientation of upper layer of alumina may differ from that of lower ones by 90°. |
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AbstractList | Scanning tunneling microscopy (STM) was used to investigate the oxide structures underlying the surface of alumina thin-film grown on NiAl(100). At a bias voltage (on the sample) below 2.0V, STM topography images of the alumina layer beneath the surface were obtained. A probe with depth of 2–8Å was readily attained. The under-surface observation shows that the film consists of stacked layers of alumina whereas the layered alumina unnecessarily comprises entire θ-Al2O3 unit cells. The lattice orientation of the upper alumina layer differs from that of the lower one by 90° — the newly grown oxide structurally matching the horizontal oxide rather than the lower oxide. The results indicate a growth process competing with the typical mode of epitaxial growth for the growth of alumina film.
► STM images of alumina layers beneath the surface of alumina film/NiAl(100) obtained. ► A probe depth of 0.2–0.8nm is readily attained. ► The orientation of upper layer of alumina may differ from that of lower ones by 90°. |
Author | Hsia, C.L. Wang, C.T. Luo, M.F. Chang, B.W. Lin, C.W. |
Author_xml | – sequence: 1 givenname: C.T. surname: Wang fullname: Wang, C.T. – sequence: 2 givenname: C.W. surname: Lin fullname: Lin, C.W. – sequence: 3 givenname: C.L. surname: Hsia fullname: Hsia, C.L. – sequence: 4 givenname: B.W. surname: Chang fullname: Chang, B.W. – sequence: 5 givenname: M.F. surname: Luo fullname: Luo, M.F. email: mfl28@phy.ncu.edu.tw |
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CitedBy_id | crossref_primary_10_1063_1_4819759 crossref_primary_10_1111_jace_13036 crossref_primary_10_1021_acs_jpcc_1c01418 crossref_primary_10_1111_ijac_12351 crossref_primary_10_5402_2012_741042 crossref_primary_10_1016_j_ceramint_2016_03_087 |
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Snippet | Scanning tunneling microscopy (STM) was used to investigate the oxide structures underlying the surface of alumina thin-film grown on NiAl(100). At a bias... |
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SubjectTerms | Alumina Density functional calculations NiAl Scanning tunneling microscopy Thin films Under-surface |
Title | Under-surface observation of thin-film alumina on NiAl(100) with scanning tunneling microscopy |
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