Under-surface observation of thin-film alumina on NiAl(100) with scanning tunneling microscopy

Scanning tunneling microscopy (STM) was used to investigate the oxide structures underlying the surface of alumina thin-film grown on NiAl(100). At a bias voltage (on the sample) below 2.0V, STM topography images of the alumina layer beneath the surface were obtained. A probe with depth of 2–8Å was...

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Published in:Thin solid films Vol. 520; no. 11; pp. 3952 - 3959
Main Authors: Wang, C.T., Lin, C.W., Hsia, C.L., Chang, B.W., Luo, M.F.
Format: Journal Article
Language:English
Published: Elsevier B.V 30-03-2012
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Abstract Scanning tunneling microscopy (STM) was used to investigate the oxide structures underlying the surface of alumina thin-film grown on NiAl(100). At a bias voltage (on the sample) below 2.0V, STM topography images of the alumina layer beneath the surface were obtained. A probe with depth of 2–8Å was readily attained. The under-surface observation shows that the film consists of stacked layers of alumina whereas the layered alumina unnecessarily comprises entire θ-Al2O3 unit cells. The lattice orientation of the upper alumina layer differs from that of the lower one by 90° — the newly grown oxide structurally matching the horizontal oxide rather than the lower oxide. The results indicate a growth process competing with the typical mode of epitaxial growth for the growth of alumina film. ► STM images of alumina layers beneath the surface of alumina film/NiAl(100) obtained. ► A probe depth of 0.2–0.8nm is readily attained. ► The orientation of upper layer of alumina may differ from that of lower ones by 90°.
AbstractList Scanning tunneling microscopy (STM) was used to investigate the oxide structures underlying the surface of alumina thin-film grown on NiAl(100). At a bias voltage (on the sample) below 2.0V, STM topography images of the alumina layer beneath the surface were obtained. A probe with depth of 2–8Å was readily attained. The under-surface observation shows that the film consists of stacked layers of alumina whereas the layered alumina unnecessarily comprises entire θ-Al2O3 unit cells. The lattice orientation of the upper alumina layer differs from that of the lower one by 90° — the newly grown oxide structurally matching the horizontal oxide rather than the lower oxide. The results indicate a growth process competing with the typical mode of epitaxial growth for the growth of alumina film. ► STM images of alumina layers beneath the surface of alumina film/NiAl(100) obtained. ► A probe depth of 0.2–0.8nm is readily attained. ► The orientation of upper layer of alumina may differ from that of lower ones by 90°.
Author Hsia, C.L.
Wang, C.T.
Luo, M.F.
Chang, B.W.
Lin, C.W.
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  email: mfl28@phy.ncu.edu.tw
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Issue 11
Keywords Thin films
Scanning tunneling microscopy
Density functional calculations
NiAl
Under-surface
Alumina
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Snippet Scanning tunneling microscopy (STM) was used to investigate the oxide structures underlying the surface of alumina thin-film grown on NiAl(100). At a bias...
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SubjectTerms Alumina
Density functional calculations
NiAl
Scanning tunneling microscopy
Thin films
Under-surface
Title Under-surface observation of thin-film alumina on NiAl(100) with scanning tunneling microscopy
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