YSZ thin film nanostructured battery for on-chip energy storage applications
•YSZ films used as electrolyte in solid state storage device.•Ultrathin YSZ (< 50 nm) was deposited by atomic layer deposition on transition metal/oxides electrodes.•The discharge behavior is similar to those of batteries.•Energy storage depends on the operation temperature. Thin film solid-state...
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Published in: | Journal of energy storage Vol. 28; p. 101220 |
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Main Authors: | , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Elsevier Ltd
01-04-2020
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Subjects: | |
Online Access: | Get full text |
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Summary: | •YSZ films used as electrolyte in solid state storage device.•Ultrathin YSZ (< 50 nm) was deposited by atomic layer deposition on transition metal/oxides electrodes.•The discharge behavior is similar to those of batteries.•Energy storage depends on the operation temperature.
Thin film solid-state batteries stand out as desired components to produce on-chip energy storage, sometimes known as ‘power on a chip’. Multilayer structures have been tried for this purpose. The characteristics of both electrodes and the solid electrolyte require careful choice to meet this need. In this paper, we propose a thin-film battery using zirconia stabilized with yttria as the electrode separator and transition metal/oxides — here ruthenium oxide and gold — as electrodes. We show promising results, given that the objectives of merit (stored energy and energy density) compete with other cutting-edge thin film energy storage devices. While optimistic about the possibility of producing a usable battery, several technical problems remain to be solved. One of them is the operating temperature: in our prototype the peak performance is at 175°C. We conclude that YSZ is able to fulfill the electrolytic task, since its ionic conduction, with a thickness of 50 nm, allows the oxidation-reduction reactions to be carried out in the ruthenium oxide layer; in this thickness their parasitic currents can be kept low.
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ISSN: | 2352-152X 2352-1538 |
DOI: | 10.1016/j.est.2020.101220 |