Si + ion implanted MPS bulk GaN diodes

• Published in: Solid-state electronics Vol. 48; no. 5; pp. 827 - 830
• Main Authors: Irokawa, Y., Kim, J., Ren, F., Baik, K.H., Gila, B.P., Abernathy, C.R., Pearton, S.J., Pan, C.-C., Chen, G.-T., Chyi, J.-I., Park, S.S.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-05-2004
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2003.09.018

The fabrication of GaN merged p–i–n/Schottky (MPS) diodes using Si
+ ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 μm were investigated. These initial MPS diodes show larger turn-on voltage (∼30 V) than the unimplanted p–i–n diodes (∼10 V) fabricated on the same wafer but lower reverse leakage current density. The Si
+ implant activation efficiency is ∼25% for 1150 °C anneals, reaching ∼30% for 1200 °C anneals.