GaAs/GaAlAs heterojunction bipolar transistors with cutoff frequencies above 10 GHz

• Published in: IEEE electron device letters Vol. 3; no. 12; pp. 366 - 368
• Main Authors: Asbeck, P.M., Miller, D.L., Petersen, W.C., Kirkpatrick, C.G.
• Format: Journal Article
• Language: English
• Published: IEEE 01-12-1982
• Subjects: Bipolar transistors; Bonding; Cutoff frequency; Doping; Electron mobility; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/EDL.1982.25602

This paper describes the fabrication and high-frequency performance of an npn GaAs/GaAlAs heterojunction bipolar transistor. The fabrication process utilized molecular beam epitaxy, and featured a nominal base layer thickness of 500Å. The cutoff frequency,f t , of the transistor was measured to be 11 GHz (a value which was limited by parasitic elements associated with bonding pads and bond-wires).