Phase identification of micro and macro bubbles at the interface of directly bonded GaAs on sapphire

Direct wafer bonding (DWB) of 3″ GaAs and R-cut sapphire was performed in a microcleanroom using ultra pure water as cleaning agent. The initial bonding is mediated by Van der Waals forces and hydrogen bridges. The bond energy is released by subsequent heating up to temperatures of 500°C. During hea...

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Bibliographic Details
Published in:	Journal of materials science Vol. 33; no. 8; pp. 2073 - 2077
Main Authors:	SENZ, S, KOPPERSCHMIDT, P, KÄSTNER, G, HESSE, D
Format:	Journal Article
Language:	English
Published:	Heidelberg Springer 01-04-1998 Springer Nature B.V
Subjects:	Applied sciences Arsenic Bond energy Bonding agents Bubbles Chemical composition Cleaning agents Composition; defects and impurities Condensed matter: structure, mechanical and thermal properties Electron diffraction Electron energy loss spectroscopy Electronics Energy dissipation Energy measurement Exact sciences and technology Gallium oxides Heating Materials science Metallization, contacts, interconnects; device isolation Microelectronic fabrication (materials and surfaces technology) Organic chemistry Photomicrographs Physics Sapphire Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid surfaces and solid-solid interfaces Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Van der Waals forces X ray analysis Crystal defects Gallium arsenides Inorganic compounds Phase studies Binary compounds Solid-solid interfaces Experimental study Heat treatments Substrates Wafer bonding Bubbles Interface reaction III-V semiconductors
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