Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared

Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared

Superlattice InAs/GaSb light-emitting diodes with peak emission wavelength of 8.6 μm and output power approaching 190 μW at 77 K from a 120 × 120 μm 2 mesa are demonstrated. Output power in excess of 600 μ.W was demonstrated from a 520 × 520 μm mesa at 1 A drive current and 50% duty cycle. Devices w...

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Bibliographic Details
Published in:IEEE journal of quantum electronics Vol. 47; no. 1; pp. 50 - 54
Main Authors: Koerperick, Edwin J, Norton, Dennis T, Olesberg, Jonathon T, Olson, Benjamin V, Prineas, John P, Boggess, Thomas F
Format: Journal Article
Language:English
Published: IEEE 01-01-2011
Subjects:
Current efficiency
Electroluminescence
Indium arsenides
Infrared
Light emitting diodes
Mesas
Molecular beam epitaxy
Physics
Power generation
semiconductor growth
semiconductor superlattices
Substrates
Superlattices
Tunnel junctions
Urban areas
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Summary:Superlattice InAs/GaSb light-emitting diodes with peak emission wavelength of 8.6 μm and output power approaching 190 μW at 77 K from a 120 × 120 μm 2 mesa are demonstrated. Output power in excess of 600 μ.W was demonstrated from a 520 × 520 μm mesa at 1 A drive current and 50% duty cycle. Devices were grown by molecular beam epitaxy on lightly n-doped GaSb substrates and employed a 16-stage cascaded active region configuration to improve current efficiency and increase optical output. Emitting regions were coupled by semi-metallic tunnel junctions consisting of a p-GaSb layer and a thickness-graded InAs/GaSb superlattice stack.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2010.2072492