Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate

HfO 2 thin films were deposited on Si wafers using an atomic layer deposition technique at temperatures ranging from 200 to 400 °C with HfCl4 as the precursor and H2O as the oxidant. The time-dependent interfacial-layer growth behavior was dependent on the deposition temperature. The interfacial lay...

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Bibliographic Details

Published in:	Applied physics letters Vol. 81; no. 2; pp. 334 - 336
Main Authors:	Cho, Moonju, Park, Jaehoo, Park, Hong Bae, Hwang, Cheol Seong, Jeong, Jaehack, Hyun, Kwang Soo
Format:	Journal Article
Language:	English
Published:	08-07-2002
Online Access:	Get full text
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