Large internal quantum efficiency of In-free UV-emitting GaN∕AlGaN quantum-well structures

Large internal quantum efficiency of In-free UV-emitting GaN∕AlGaN quantum-well structures

We have achieved dramatic improvement of the internal quantum efficiency (IQE) for ultraviolet-emitting GaN∕AlGaN quantum-well (QW) structures. Despite a defect density of a few 109cm−2 and the use of an In-free QW we achieve best values for the IQE at room temperature of 26%. Under strong nonresona...

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Bibliographic Details
Published in:Applied physics letters Vol. 88; no. 19
Main Authors: Fuhrmann, D., Retzlaff, T., Rossow, U., Bremers, H., Hangleiter, A., Ade, G., Hinze, P.
Format: Journal Article
Language:English
Published: 08-05-2006
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Summary:We have achieved dramatic improvement of the internal quantum efficiency (IQE) for ultraviolet-emitting GaN∕AlGaN quantum-well (QW) structures. Despite a defect density of a few 109cm−2 and the use of an In-free QW we achieve best values for the IQE at room temperature of 26%. Under strong nonresonant excitation, the IQE even increases to 38%. We observe a weak dependence of the IQE on excitation power for our structures. This indicates that similar mechanisms as for GaInN-based light emitters are present.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2202109