High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC

High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC

We have measured the electrical response to NO2, N2, NH3, and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity bet...

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Bibliographic Details
Published in:Applied physics letters Vol. 103; no. 5
Main Authors: Iezhokin, I., Offermans, P., Brongersma, S. H., Giesbers, A. J. M., Flipse, C. F. J.
Format: Journal Article
Language:English
Published: 29-07-2013
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Summary:We have measured the electrical response to NO2, N2, NH3, and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity better than the experimentally limited 1 ppb. The strong increase in sensitivity of quasi freestanding epitaxial graphene can be explained by a Fermi-energy close to the Dirac point, leading to a strongly surface doping dependent sample resistance. Both sensors show a negligible sensitivity to N2, NH3, and CO.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4816762