Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

• Published in: Applied physics letters Vol. 80; no. 9; pp. 1661 - 1663
• Main Authors: Luo, B., Johnson, J. W., Kim, J., Mehandru, R. M., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Baca, A. G., Briggs, R. D., Shul, R. J., Monier, C., Han, J.
• Format: Journal Article
• Language: English
• Published: 04-03-2002
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.1455692

Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the gate and drain contact. Low-temperature (100 °C) layers of MgO or Sc2O3 deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps. These dielectrics may have advantages over the more conventional SiNX passivation in terms of long-term device stability.