Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition

• Published in: Modern electronic materials Vol. 9; no. 4; pp. 177 - 184
• Main Authors: Temirov, Alexander A., Kubasov, Ilya V., Turutin, Andrei V., Ilina, Tatiana S., Kislyuk, Alexander M., Kiselev, Dmitry A., Skryleva, Elena A., Sobolev, Nikolai A., Salimon, Igor A., Batrameev, Nikolai V., Malinkovich, Mikhail D., Parkhomenko, Yuri N.
• Format: Journal Article
• Language: English
• Published: Pensoft Publishers 12-12-2023
• ISSN: 2452-2449; 2452-1779
• DOI: 10.3897/j.moem.9.4.116552

Silicon-carbon films are of great interest as diamond-like materials combining unique properties, e.g. high hardness, adhesion to a wide range of materials, abrasion resistance, chemical resistance, low friction coefficient and biocompatibility. The presence of silicon in the films significantly reduces their inner mechanical stress as compared to diamond films. Currently, the films are used in industry, primarily, as solid lubricants and protective coatings. There are a large number of silicon-carbon film synthesis methods the most widely used of which are various options of chemical vapor deposition. A new silicon-carbon film synthesis technique has been suggested and tested. The technique is based on the use of high-frequency induction for obtaining plasma of silicon and carbon vapors supplied to the reaction chamber from an external source. Impurity-free silicon-carbon films containing 63–65 % carbon atoms with
sp
3
orbital hybridization have been synthesized on Sitall substrates. The composition, surface roughness and friction coefficient of the impurity-free silicon-carbon films synthesized using the suggested technology have been studied. The possibility of implementing resistive switching in thin silicon-carbon films in cross-bar structures with metallic electrodes has been analyzed.