Transport properties of GaAs1−xNx thin films grown by metalorganic chemical vapor deposition

Transport properties of GaAs1−xNx thin films grown by metalorganic chemical vapor deposition

A series of devices with the structure GaAs/GaAs1−xNx/GaAs and 0.01<x<0.03 have been grown by metalorganic chemical vapor deposition. The transient photoconductive decay of these structures is measured as a function of excitation wavelength and injection level. The decay process is generally d...

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Bibliographic Details
Published in:Applied physics letters Vol. 77; no. 23; pp. 3794 - 3796
Main Authors: Ahrenkiel, R. K., Johnston, S. W., Keyes, B. M., Friedman, D. J., Vernon, S. M.
Format: Journal Article
Language:English
Published: 04-12-2000
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Summary:A series of devices with the structure GaAs/GaAs1−xNx/GaAs and 0.01<x<0.03 have been grown by metalorganic chemical vapor deposition. The transient photoconductive decay of these structures is measured as a function of excitation wavelength and injection level. The decay process is generally described by a stretched exponential function with anomously large decay times. The photoconductive excitation spectrum extends into the infrared, well beyond the bandgap of the given alloy. The processes here can be explained by nitrogen clusters that produce charge separation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1328774