Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain

• Published in: IEEE electron device letters Vol. 34; no. 11; pp. 1367 - 1369
• Main Authors: Ze Yuan, Kumar, Archana, Chien-Yu Chen, Nainani, Aneesh, Bennett, Brian R., Boos, John Brad, Saraswat, Krishna C.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-11-2013; Institute of Electrical and Electronics Engineers
• Subjects: Antimonide semiconductors; Applied sciences; Compound structure devices; Electronics; Etching; Exact sciences and technology; metal source/drain (S/D); MOSFET; MOSFET circuits; Ni-GaSb; Nickel; p-channel MOSFET; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Transistors; Ternary compound; Performance evaluation; MOSFET; Binary compound; Heat treatment; Gallium antimonides; Electrical conductivity; Indium antimonides; Contact resistance; metal source/drain (S/D); Sheet resistivity; High field; Antimonide semiconductors; Nickel alloy; Electrical characteristic; MOS technology; Semiconductor materials; Hole mobility; III-V compound; p-channel MOSFET; Self aligned technology; Charge density; p channel; Ni-GaSb; Barrier height; Heterostructures; Schottky barrier; On off effect
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2013.2280615

In this letter, we study the formation and electrical properties of Ni-GaSb alloys by direct reaction of Ni with GaSb. It is found that several properties of Ni-antimonide alloys, including low thermal budget processing (300°C), low Schottky barrier height for holes (~0.1 eV), low sheet resistance of Ni-InGaSb (53 Ω/\square), and low specific contact resistivity (7.6×10) -7 Ω cm 2 ), show good progress toward antimonide-based metal source/drain (S/D) p-channel metal-oxide-semiconductor field-effect transistors. Devices with a self-aligned metal S/D were demonstrated, in which heterostructure design is adopted to further improve the performance, e.g., ON/OFF ratio , subthreshold swing (140 mV/decade), and high effective-field hole mobility of ~510 cm 2 /Vs at sheet charge density of 2×10 12 cm -2 .