Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD

Thick silicon carbide films were grown on sapphire (0001) and silicon (111) substrates using metal organic chemical vapor deposition (MOCVD). Diethylmethylsilane (DEMS) has been used as a single precursor, which contain Si and C atoms in the same molecule, without any carrier or bubbler gas. Atomic...

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Bibliographic Details

Published in:	Eurasian chemico-technological journal Vol. 15; no. 1; pp. 25 - 29
Main Authors:	R. E. Beisenov, R. Ebrahim, Z. A. Mansurov, S. Th. Tokmoldin, B. Z. Mansurov, A. Ignatiev
Format:	Journal Article
Language:	English
Published:	al-Farabi Kazakh National University 01-01-2013
Online Access:	Get full text
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