Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate

Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate

Saved in:
Bibliographic Details
Published in:Technical physics letters Vol. 28; no. 11; pp. 935 - 938
Main Authors: Sorokin, L. M., Savkina, N. S., Shuman, V. B., Lebedev, A. A., Mosina, G. N., Hutchison, G.
Format: Journal Article
Language:English
Published: 01-11-2002
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
ISSN:1063-7850
1090-6533
DOI:10.1134/1.1526889