Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates

Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates

Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed tho...

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Bibliographic Details
Published in:Applied physics letters Vol. 78; no. 4; pp. 478 - 479
Main Authors: Chen, Nuo Fu, Zhong, Xingru, Lin, Lanying, Zhang, Mian, Wang, Yunsheng, Bai, Xiwei, Zhao, Jing
Format: Journal Article
Language:English
Published: 22-01-2001
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Summary:Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single crystal has surpassed the best terrestrial counterparts.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1342201