Growth, branching, and kinking of molecular-beam epitaxial 〈110〉 GaAs nanowires

Growth, branching, and kinking of molecular-beam epitaxial 〈110〉 GaAs nanowires

GaAs nanowires were grown on GaAs (100) substrates by vapor–liquid–solid growth. About 8% of these nanowires grew in 〈110〉 directions with straight, Y-branched or L-shaped morphologies. The role of strain-induced reduction in surface free energy is discussed as a possible factor contributing to the...

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Bibliographic Details
Published in:Applied physics letters Vol. 83; no. 16; pp. 3368 - 3370
Main Authors: Wu, Z. H., Mei, X., Kim, D., Blumin, M., Ruda, H. E., Liu, J. Q., Kavanagh, K. L.
Format: Journal Article
Language:English
Published: 20-10-2003
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Summary:GaAs nanowires were grown on GaAs (100) substrates by vapor–liquid–solid growth. About 8% of these nanowires grew in 〈110〉 directions with straight, Y-branched or L-shaped morphologies. The role of strain-induced reduction in surface free energy is discussed as a possible factor contributing to the evolution of 〈110〉 nanowires. Kinking and branching is attributed to growth instabilities resulting from equivalent surface free energies for 〈110〉 growth directions. Transmission electron microscopy verified that 〈110〉 nanowires are defect free.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1618018