Angle-resolved x-ray photoelectron spectroscopy of ultrathin Al2O3 films grown by atomic layer deposition
Thin (45 nm) and ultrathin (4.5–1 nm) Al2O3 layers deposited on HF-stripped Si or thin SiO2 surfaces by atomic layer deposition were studied by angle-resolved x-ray photoelectron spectroscopy, before and after rapid thermal annealing (RTA) at 800 °C for 15 min in N2 or annealing in a conventional fu...
Saved in:
| Published in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 20; no. 6; pp. 1867 - 1876 |
|---|---|
| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-11-2002
|
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!