Sb enhancement of lateral superlattice formation in GaInP

• Published in: Applied physics letters Vol. 78; no. 10; pp. 1376 - 1378
• Main Authors: Fetzer, C. M., Lee, R. T., Jun, S. W., Stringfellow, G. B., Lee, S. M., Seong, T. Y.
• Format: Journal Article
• Language: English
• Published: 05-03-2001
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.1350424

Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the [1̄10] direction is as much as 41 times larger than along [110]. Transmission electron microscopy results show a lamellar domain structure in the [1̄10]-zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the [1̄10] direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration.