Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars

Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars

We report unidirectional emission from lasing in In0.09Ga0.91N/In0.01Ga0.99N multiple-quantum-well spiral micropillars. Our imaging technique shows that the maximum emission comes from the notch of the spiral microcavities at an angle about 40° from the normal of the notch. At room temperature, the...

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Bibliographic Details
Published in:Applied physics letters Vol. 83; no. 9; pp. 1710 - 1712
Main Authors: Chern, G. D., Tureci, H. E., Stone, A. Douglas, Chang, R. K., Kneissl, M., Johnson, N. M.
Format: Journal Article
Language:English
Published: 01-09-2003
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Summary:We report unidirectional emission from lasing in In0.09Ga0.91N/In0.01Ga0.99N multiple-quantum-well spiral micropillars. Our imaging technique shows that the maximum emission comes from the notch of the spiral microcavities at an angle about 40° from the normal of the notch. At room temperature, the spiral microcavity lases near 400 nm when optically pumped with 266 or 355 nm light. A reduction in the lasing threshold and an improvement in unidirectionality occurs when the microcavity is selectively pumped near its boundary.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1605792