A Fully Coupled Scheme for a Self-Consistent Poisson-NEGF Solver

• Published in: IEEE transactions on electron devices Vol. 70; no. 1; pp. 1 - 8
• Main Authors: Ahn, Phil-Hun, Hong, Sung-Min
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-01-2023; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Electron density; Fully coupled scheme; Green's functions; Mathematical analysis; MOSFETs; nanosheet MOSFET; nonequilibrium Green function (NEGF); Perturbation; Solvers
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2022.3223324

This work presents a fully coupled scheme for a self-consistent Poisson-nonequilibrium Green function (NEGF) solver. In this solver, responses of the Green functions to the potential perturbation are rigorously calculated. As a result, the detailed dependence of the electron density on the electrostatic potential can be accurately considered. When applied to the steady-state (DC) simulation, the convergence behavior is much improved compared with the conventional Gummel-type approach. As a numerical example, real-space NEGF results are shown for a highly scaled nanosheet MOSFET under the ballistic transport approximation.