Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors

• Published in: IEEE transactions on electron devices Vol. 65; no. 9; pp. 3786 - 3790
• Main Authors: Nguyen, Manh-Cuong, Nguyen, An Hoang Thuy, Ji, Hyungmin, Cheon, Jonggyu, Kim, Jin-Hyun, Yu, Kyoung-Moon, Cho, Seong-Yong, Kim, Sang-Woo, Choi, Rino
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-09-2018; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Band tail; charge pumping (CP); conduction band edge; Conduction bands; Current measurement; Density of states; density of states (DOSs); Dielectrics; Electron traps; Gallium; Indium; Indium gallium zinc oxide; indium gallium zinc oxide (IGZO); Logic gates; metal–oxide (MO)–semiconductor; MOSFET; oxygen vacancy; Pumping; Resistance; Semiconductor devices; single pulse; Thin film transistors; thin-film transistor (TFT); Transistors; trap density; trap profiling; Zinc oxide; Zinc oxides
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2018.2859224

A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.