Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation

Epitaxial n-GaN was irradiated with 5.4-MeV He ions. Capacitance–voltage (C–V) measurements showed that 5.4-MeV He ions remove free carriers at a rate of 6200±300 cm−1 in the first micron below the surface. Deep level transient spectroscopy (DLTS) revealed that, in addition to the radiation-induced...

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Bibliographic Details

Published in:	Applied physics letters Vol. 73; no. 25; pp. 3745 - 3747
Main Authors:	Auret, F. D., Goodman, S. A., Koschnick, F. K., Spaeth, J-M., Beaumont, B., Gibart, P.
Format:	Journal Article
Language:	English
Published:	21-12-1998
Online Access:	Get full text
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