Dual-Color InAs/GaSb Cascaded Superlattice Light-Emitting Diodes

• Published in: IEEE journal of quantum electronics Vol. 51; no. 12; pp. 1 - 6
• Main Authors: Ricker, Russell J., Hudson, Andrew, Provence, Sydney, Norton, Dennis T., Olesberg, Jonathon T., Murray, Lee M., Prineas, John P., Boggess, Thomas F.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-12-2015; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Arrays; Color; infrared imaging; infrared scene projection; Junctions; Light emitting diodes; semiconductor superlattices; Superlattices; Temperature; infrared imaging; infrared scene projection; Light-emitting diodes; semiconductor superlattices
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2015.2497538

Over the last decade, InAs/GaSb superlattice structures have become an increasingly important technology for infrared applications. By stacking two superlattice structures back-to-back with a conductive layer separating them, independently operable, dual color, cascaded InAs/GaSb superlattice light-emitting diodes were grown via molecular beam epitaxy on (100) GaSb substrates. An 8 × 8 matrix of 48-μm pitch pixels was fabricated using standard photolithography and wet-etch techniques. At 77 K, the emitted wavelengths are in the 3.2-4.2- and 4.2-5.2-μm range, with peak wavelengths at 3.81 and 4.72 μm. In quasi-continuous operation, radiances in excess of 2 W/cm 2 · sr from the longer wave and 5 W/cm 2 · sr from the shorter wave emitters are achieved.