Self-propagating room-temperature silicon wafer bonding in ultrahigh vacuum

Self-propagating room-temperature silicon wafer bonding in ultrahigh vacuum

Wafer bonding of commercial 4 in. silicon wafers has been performed at room temperature under ultrahigh vacuum conditions. After local initiation of the bonding process the bonding area is self-propagating just as in the case of wafer bonding under atmospheric conditions. The room-temperature bonded...

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Bibliographic Details
Published in:Applied physics letters Vol. 67; no. 24; pp. 3614 - 3616
Main Authors: Gösele, U., Stenzel, H., Martini, T., Steinkirchner, J., Conrad, D., Scheerschmidt, K.
Format: Journal Article
Language:English
Published: 11-12-1995
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Summary:Wafer bonding of commercial 4 in. silicon wafers has been performed at room temperature under ultrahigh vacuum conditions. After local initiation of the bonding process the bonding area is self-propagating just as in the case of wafer bonding under atmospheric conditions. The room-temperature bonded wafers, without any additional heat treatment show a bonding strength typical for bulk material.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.115335