Photoelectric Characteristic Evaluation of Different Structured UTBB MOSFETs

• Published in: IEEE transactions on electron devices Vol. 67; no. 5; pp. 1919 - 1923
• Main Authors: Liu, Liqiao, Chen, Wangyong, Liu, Xiaoyan, Du, Gang
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-05-2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Backgate modulation; Buried structures; Dark current; Image sensors; interface states; light sensitivity; Lighting; Modulation; MOSFET; MOSFETs; Photodiodes; Photoelectricity; Quantum efficiency; ultrathin body and buried oxide (UTBB) image sensor
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2020.2977963

This article presents an evaluation of the photoelectric characteristic of different structured ultrathin body and buried oxide (UTBB) MOSFETs. The UTBB MOSFETs can achieve photoelectric conversion by integrating a doped well or photodiode beneath the BOX. With lightly doped well, the well-UTBB (W-UTBB) image sensor is more sensitive to illumination. On the other hand, the photodiode-UTBB (PD-UTBB) image sensor has a larger full well capacity. The influence of well doped concentration and interface traps at BOX/well on the photoelectric characteristics of both devices has been investigated. The well doped concentration has great impacts on the light sensitivity of the W-UTBB. The interface traps would increase the dark current of the W-UTBB and reduce the internal quantum efficiency (IQE) of the PD-UTBB.