Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric
We have developed a silicon oxynitride (SiON) deposition process using a plasma-enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal-insulator-semiconductor field-effect transistors (MISFETs). The optimized SiON film had a relative dielectric constant of 5.3 and a bre...
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| Published in: | IEEE electron device letters Vol. 38; no. 8; pp. 1090 - 1093 |
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| Main Authors: | , , , , , , |
| Format: | Journal Article |
| Language: | English |
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01-08-2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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| Abstract | We have developed a silicon oxynitride (SiON) deposition process using a plasma-enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal-insulator-semiconductor field-effect transistors (MISFETs). The optimized SiON film had a relative dielectric constant of 5.3 and a breakdown field of 12 MV/cm. A normally-off GaN-on-Si MISFET fabricated with a 33-nm SiON gate dielectric exhibited a threshold voltage of ~2 V, an ON-resistance of 7.85 mQ · cm 2 , and a breakdown voltage of ~640 V at the OFF-state current density of 1 μA/mm. The extracted interface trap density was 1 × 10 12 cm -2 · eV -1 at E c - E t = 0.442 eV, which resulted in negligible hysteresis and excellent dynamic characteristics. |
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| AbstractList | We have developed a silicon oxynitride (SiON) deposition process using a plasma-enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal–insulator–semiconductor field-effect transistors (MISFETs). The optimized SiON film had a relative dielectric constant of 5.3 and a breakdown field of 12MV/cm. A normally-off GaN-on-Si MISFET fabricated with a 33-nm SiON gate dielectric exhibited a threshold voltage of ~2 V, an ON-resistance of [Formula Omitted], and a breakdown voltage of ~640 V at the OFF-state current density of [Formula Omitted]/mm. The extracted interface trap density was [Formula Omitted] cm[Formula Omitted] at [Formula Omitted] eV, which resulted in negligible hysteresis and excellent dynamic characteristics. We have developed a silicon oxynitride (SiON) deposition process using a plasma-enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal-insulator-semiconductor field-effect transistors (MISFETs). The optimized SiON film had a relative dielectric constant of 5.3 and a breakdown field of 12 MV/cm. A normally-off GaN-on-Si MISFET fabricated with a 33-nm SiON gate dielectric exhibited a threshold voltage of ~2 V, an ON-resistance of 7.85 mQ · cm 2 , and a breakdown voltage of ~640 V at the OFF-state current density of 1 μA/mm. The extracted interface trap density was 1 × 10 12 cm -2 · eV -1 at E c - E t = 0.442 eV, which resulted in negligible hysteresis and excellent dynamic characteristics. |
| Author | Ho-Young Cha Hyun-Seop Kim Jungwoo Oh Chun-Hyung Cho Kwang-Seok Seo Sang-Woo Han Won-Ho Jang |
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| Cites_doi | 10.3390/ma5071297 10.1143/APEX.4.114101 10.1063/1.1385803 10.7567/APEX.7.041003 10.1109/TED.2014.2315994 10.1109/LED.2012.2236678 10.1016/j.sse.2016.04.016 10.1109/LED.2013.2291551 10.1016/j.sse.2010.10.001 10.1088/0268-1242/30/11/115008 10.1063/1.1642276 10.5515/JKIEES.2015.15.2.82 10.5573/JSTS.2016.16.6.867 10.1109/LED.2014.2360541 10.1109/LED.2011.2163293 10.1063/1.371866 10.1143/APEX.5.066502 10.1109/TED.2015.2510630 10.7567/APEX.9.071003 10.1016/j.sse.2007.10.022 10.1109/ISPSD.2014.6855974 10.1109/IRPS.2015.7112769 10.1109/LED.2013.2279844 10.1116/1.4802478 10.1109/LED.2013.2293579 10.7567/APEX.7.111002 |
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| References | ref12 ref15 ref14 ref11 ref10 kang (ref24) 0 ref2 ref1 ref17 ref16 ref19 ref18 freedsman (ref23) 2014; 7 ref26 ref25 schroder (ref27) 2006 ref20 ref22 ref21 ahn (ref13) 2013 ref28 choi (ref6) 2014; 35 ref29 ref8 ref7 ref9 ref4 ref3 ref5 |
| References_xml | – year: 0 ident: ref24 article-title: High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure publication-title: Phys Status Solidi A contributor: fullname: kang – ident: ref15 doi: 10.3390/ma5071297 – ident: ref19 doi: 10.1143/APEX.4.114101 – ident: ref16 doi: 10.1063/1.1385803 – volume: 7 start-page: 41003 year: 2014 ident: ref23 article-title: Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V) publication-title: Appl Phys Exp doi: 10.7567/APEX.7.041003 contributor: fullname: freedsman – ident: ref11 doi: 10.1109/TED.2014.2315994 – ident: ref4 doi: 10.1109/LED.2012.2236678 – ident: ref5 doi: 10.1016/j.sse.2016.04.016 – start-page: 311 year: 2013 ident: ref13 article-title: Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and RF-sputtered HfO2 gate insulator publication-title: Proc IEEE Int Symp Power Semiconductor Devices ICs contributor: fullname: ahn – volume: 35 start-page: 30 year: 2014 ident: ref6 article-title: Improvement of V $_{th}$ instability in normally-off GaN MIS-HFETs employing PEALD-SiNx as an interfacial layer publication-title: IEEE Electron Device Lett doi: 10.1109/LED.2013.2291551 contributor: fullname: choi – ident: ref25 doi: 10.1016/j.sse.2010.10.001 – start-page: 347 year: 2006 ident: ref27 publication-title: Semiconductor Material and Device Characterization contributor: fullname: schroder – ident: ref20 doi: 10.1088/0268-1242/30/11/115008 – ident: ref17 doi: 10.1063/1.1642276 – ident: ref2 doi: 10.5515/JKIEES.2015.15.2.82 – ident: ref21 doi: 10.5573/JSTS.2016.16.6.867 – ident: ref12 doi: 10.1109/LED.2014.2360541 – ident: ref9 doi: 10.1109/LED.2011.2163293 – ident: ref3 doi: 10.1063/1.371866 – ident: ref1 doi: 10.1143/APEX.5.066502 – ident: ref8 doi: 10.1109/TED.2015.2510630 – ident: ref14 doi: 10.7567/APEX.9.071003 – ident: ref18 doi: 10.1016/j.sse.2007.10.022 – ident: ref29 doi: 10.1109/ISPSD.2014.6855974 – ident: ref7 doi: 10.1109/IRPS.2015.7112769 – ident: ref10 doi: 10.1109/LED.2013.2279844 – ident: ref26 doi: 10.1116/1.4802478 – ident: ref22 doi: 10.1109/LED.2013.2293579 – ident: ref28 doi: 10.7567/APEX.7.111002 |
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| Snippet | We have developed a silicon oxynitride (SiON) deposition process using a plasma-enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si... |
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| SubjectTerms | Capacitance Chemical vapor deposition Current density Dielectric breakdown Dielectrics Dynamic characteristics Electric breakdown Field effect transistors Gallium nitride Gallium nitride (GaN) Gallium nitrides Hysteresis Logic gates MIS (semiconductors) MISFETs normally-off plasma enhanced chemical vapor deposition (PECVD) Semiconductor devices Silicon Silicon oxynitride silicon oxynitride (SiON) Surface mount technology Threshold voltage |
| Title | Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric |
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