Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature

• Published in: Applied physics letters Vol. 65; no. 5; pp. 520 - 521
• Main Authors: Khan, M. Asif, Krishnankutty, S., Skogman, R. A., Kuznia, J. N., Olson, D. T., George, T.
• Format: Journal Article
• Language: English
• Published: 01-08-1994
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.112284

We report the observation of room temperature violet (415 nm) stimulated emission in the vertical cavity mode from photopumped GaN/In0.25Ga0.75N heterojunctions. The InGaN/GaN heterojunction was deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition and was of high enough optical quality to achieve room-temperature stimulated emission. The observed emission intensity was found to be a nonlinear function of incident optical pump power density. At threshold we observe a clear line narrowing of the output optical signal from 20 to 1.5 nm full width at half-maximum.