Self-Heating and Thermal Network Model for Complementary FET

• Published in: IEEE transactions on electron devices Vol. 69; no. 1; pp. 11 - 16
• Main Authors: Zhao, Songhan, Cai, Linlin, Chen, Wangyong, He, Yandong, Du, Gang
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-01-2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: CFET; CMOS; Crosstalk; Heating; Heating systems; High temperature effects; Integrated circuit modeling; Predictive models; self-heating effect (SHE); Semiconductor device modeling; SHE-related reliability; Thermal conductivity; thermal crosstalk; thermal network model; Thermal resistance; Thermodynamic properties
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2021.3130010

In this article, we investigate the self-heating effect (SHE) of the Complementary FET (CFET) device and propose a cross-coupled thermal network model. For the investigation of thermal behavior, the intra- and inter-device crosstalk of CFET is evaluated qualitatively through the defined crosstalk coefficient. The results indicate that CFETs have more severe intra-device thermal crosstalk, almost twice that of CMOS. Moreover, the vertical structure makes the heat dissipation path of CFET devices significantly different in the two transition states (inputs "1" and "0"). Based on the thermal behavior characteristics of CFET and the necessity of high-precision and rapid prediction of thermal characteristics of the devices, a thermal network model is proposed, which can quickly respond to the heat source and be extended at the array level. In the last part, we analyze the influence of load capacitance and operating frequency on the self-heating of CFET, and SHE-related reliability lifetime is predicted based on the lattice temperature obtained from the thermal network. The prediction results show that the bias temperature instability (BTI) lifetime of CFET degrades by 84% compared with standard CMOS.