Direct wafer bonding and layer transfer-a new approach to integration of ferroelectric oxides into silicon technology
Metal-ferroelectric-silicon (MFS) structures were fabricated by a layer transfer process and direct wafer bonding (DWB) and by direct deposition of ferroelectric films onto Si. Detailed transmission electron microscope (TEM) investigations revealed that a direct wafer bonding and layer transfer proc...
Saved in:
| Published in: | Ferroelectrics Vol. 231; no. 1; pp. 169 - 178 |
|---|---|
| Main Authors: | , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Taylor & Francis Group
01-06-1999
|
| Subjects: | |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Abstract | Metal-ferroelectric-silicon (MFS) structures were fabricated by a layer transfer process and direct wafer bonding (DWB) and by direct deposition of ferroelectric films onto Si. Detailed transmission electron microscope (TEM) investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces. C-V characteristics and interface trap measurements show a large difference for Au-ferroelectric-Si structures fabricated by bonding or by direct deposition. For directly deposited interfaces the trap densities are ranging from 2×10
12
cm
−2
eV
−1
for SBT/Si to 2×10
13
cm
−2
eV
−1
for PZT/Si. For bonded interfaces, irrespective of the top ferroelectric layer, the trap density is about 4×10
11
cm
−2
eV
−1
. |
|---|---|
| AbstractList | Metal-ferroelectric-silicon (MFS) structures were fabricated by a layer transfer process and direct wafer bonding (DWB) and by direct deposition of ferroelectric films onto Si. Detailed transmission electron microscope (TEM) investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces. C-V characteristics and interface trap measurements show a large difference for Au-ferroelectric-Si structures fabricated by bonding or by direct deposition. For directly deposited interfaces the trap densities are ranging from 2 x 10 super(12) cm super(-2)eV super(-1) for SBT/Si to 2 x 10 super(13) cm super(-2)eV super(-1) for PZT/Si. For bonded interfaces, irrespective of the top ferroelectric layer, the trap density is about 4 x 10 super(11) cm super(-2)eV super(-1). Metal-ferroelectric-silicon (MFS) structures were fabricated by a layer transfer process and direct wafer bonding (DWB) and by direct deposition of ferroelectric films onto Si. Detailed transmission electron microscope (TEM) investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces. C-V characteristics and interface trap measurements show a large difference for Au-ferroelectric-Si structures fabricated by bonding or by direct deposition. For directly deposited interfaces the trap densities are ranging from 2×10 12 cm −2 eV −1 for SBT/Si to 2×10 13 cm −2 eV −1 for PZT/Si. For bonded interfaces, irrespective of the top ferroelectric layer, the trap density is about 4×10 11 cm −2 eV −1 . |
| Author | Alexe, M. Gösele, U. Senz, St Pignolet, A. Hesse, D. |
| Author_xml | – sequence: 1 givenname: M. surname: Alexe fullname: Alexe, M. organization: Max Planck Institute of Microstructure Physics – sequence: 2 givenname: St surname: Senz fullname: Senz, St organization: Max Planck Institute of Microstructure Physics – sequence: 3 givenname: A. surname: Pignolet fullname: Pignolet, A. organization: Max Planck Institute of Microstructure Physics – sequence: 4 givenname: D. surname: Hesse fullname: Hesse, D. organization: Max Planck Institute of Microstructure Physics – sequence: 5 givenname: U. surname: Gösele fullname: Gösele, U. organization: Max Planck Institute of Microstructure Physics |
| BookMark | eNqFkE1LAzEQhoNUsK3-AG85eVtNdjdtA16kfkLBi57DbHa2jaRJTVLa_fem1FtBLxkm8zzD8I7IwHmHhFxzdsvZjN0xxgXjUsrc8FqU0zMy5GJSFYLzckCGh3mRgeqCjGL8ym1V13JIto8moE50Bx0G2njXGrek4Fpqoc8_KYCLeVQAdbijsNkED3pFk6fGJVwGSMY76juaoeDR5mXBaOr3psV4YDyNxhqdoYR65bz1y_6SnHdgI1791jH5fH76mL8Wi_eXt_nDotClZCm_TEA9kzOUJQpoWVlLXkIrpq1ALnRTS11OcxENsBagQs4Ek02DICeSddWY3Bz35qu_txiTWpuo0Vpw6LdRlRNZSc5FBvkR1MHHGLBTm2DWEHrFmToErE4Czs790TGu82ENOx9sqxL01ocux6ZNVNVf-vRf_cRSaZ-qH-Wvlz0 |
| CitedBy_id | crossref_primary_10_1002_phbl_20000561010 |
| Cites_doi | 10.1143/JJAP.37.1107 10.1016/S0167-9317(97)00023-3 10.1080/10584589808202089 10.1080/00150197608236584 10.1116/1.587505 10.1063/1.121337 10.1143/JJAP.27.L2364 10.1063/1.368279 10.1557/PROC-493-517 10.1080/10584589808012697 10.1016/S0169-4332(97)80118-3 10.1063/1.119189 10.1080/10584589908228469 10.1016/S0254-0584(98)00090-X 10.1103/PhysRevLett.81.3014 |
| ContentType | Journal Article |
| Copyright | Copyright Taylor & Francis Group, LLC 1999 |
| Copyright_xml | – notice: Copyright Taylor & Francis Group, LLC 1999 |
| DBID | AAYXX CITATION 7U5 8FD L7M |
| DOI | 10.1080/00150199908014527 |
| DatabaseName | CrossRef Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Solid State and Superconductivity Abstracts |
| DatabaseTitleList | Technology Research Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EISSN | 1563-5112 |
| EndPage | 178 |
| ExternalDocumentID | 10_1080_00150199908014527 8014527 |
| Genre | Session J: Processing technologies |
| GroupedDBID | -~X .7F .QJ 0BK 0R~ 1TA 2DF 30N 3YN 4.4 5GY 5VS AAAVI AAENE AAJMT AALDU AAMIU AANMX AAPUL AAQRR ABBKH ABCCY ABCES ABFIM ABGQB ABHAV ABJVF ABLIJ ABPEM ABPTK ABQHQ ABTAI ABXUL ACGEJ ACGFS ACGOD ACIWK ACLZH ACTIO ADCVX ADGTB ADXPE AEGYZ AEISY AENEX AEOZL AEPSL AEYOC AFKVX AFOLD AFWLO AGDLA AGMYJ AHDLD AIJEM AIRXU AJWEG AKBVH AKOOK ALMA_UNASSIGNED_HOLDINGS ALQZU AQRUH AVBZW AWYRJ BLEHA C5L CAG CCCUG CE4 COF CS3 DGEBU DGEYW DKSSO DU5 DWNMW EBKLY EBS EJD E~A E~B FUNRP FVPDL GCUZY GTTXZ H13 HZ~ H~P J.P KYCEM M4Z NA5 NUSFT NZ- O9- P2P PQEST PQQKQ QSQFL RNANH ROSJB RTWRZ S-T SNACF TCJPB TEX TFL TFT TFW TTHFI TWF UPT UT5 UU3 V1K ZGOLN ~S~ 07S 29H AATVF AAYXX ABJNI ABPAQ ABXYU ABZIJ ACKDS AFDUV AFFNX AFGMD AHDZW AI. AIPZZ ASQZU BVUPT C09 CITATION ECKKI EXXQB HF~ IPNFZ JHRKR LJTGL RIG RNS TAZ TBQAZ TDBHL TFMCV TUROJ UC4 UU9 V3L VH1 7U5 8FD L7M |
| ID | FETCH-LOGICAL-c290t-c205a4898e92e5ad024912ad57d5e15cb49c27cb45ba0daa3e10509bbea9690f3 |
| IEDL.DBID | TFW |
| ISSN | 0015-0193 |
| IngestDate | Fri Oct 25 22:16:49 EDT 2024 Thu Nov 21 20:38:04 EST 2024 Mon May 13 12:10:12 EDT 2019 Tue Jun 13 19:24:15 EDT 2023 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 1 |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c290t-c205a4898e92e5ad024912ad57d5e15cb49c27cb45ba0daa3e10509bbea9690f3 |
| Notes | SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 |
| PQID | 26939115 |
| PQPubID | 23500 |
| PageCount | 10 |
| ParticipantIDs | informaworld_taylorfrancis_310_1080_00150199908014527 proquest_miscellaneous_26939115 crossref_primary_10_1080_00150199908014527 |
| PublicationCentury | 1900 |
| PublicationDate | 6/1/1999 |
| PublicationDateYYYYMMDD | 1999-06-01 |
| PublicationDate_xml | – month: 06 year: 1999 text: 6/1/1999 day: 01 |
| PublicationDecade | 1990 |
| PublicationTitle | Ferroelectrics |
| PublicationYear | 1999 |
| Publisher | Taylor & Francis Group |
| Publisher_xml | – name: Taylor & Francis Group |
| References | CIT0010 CIT0001 CIT0012 CIT0011 Hartmann A. J. (CIT0015) 1998; 32 Scon J. F. (CIT0013) 1998; 1 CIT0003 CIT0014 CIT0002 CIT0005 CIT0016 CIT0004 CIT0007 CIT0006 CIT0017 CIT0009 CIT0008 |
| References_xml | – ident: CIT0002 doi: 10.1143/JJAP.37.1107 – ident: CIT0014 doi: 10.1016/S0167-9317(97)00023-3 – ident: CIT0004 doi: 10.1080/10584589808202089 – ident: CIT0001 doi: 10.1080/00150197608236584 – ident: CIT0017 doi: 10.1116/1.587505 – ident: CIT0011 doi: 10.1063/1.121337 – volume: 32 start-page: S1329 year: 1998 ident: CIT0015 publication-title: J., Korean Phys. Soc. contributor: fullname: Hartmann A. J. – ident: CIT0012 doi: 10.1143/JJAP.27.L2364 – volume: 1 start-page: 1 year: 1998 ident: CIT0013 publication-title: Ferroelectric reviews contributor: fullname: Scon J. F. – ident: CIT0016 doi: 10.1063/1.368279 – ident: CIT0008 doi: 10.1557/PROC-493-517 – ident: CIT0007 doi: 10.1080/10584589808012697 – ident: CIT0003 doi: 10.1016/S0169-4332(97)80118-3 – ident: CIT0006 doi: 10.1063/1.119189 – ident: CIT0009 doi: 10.1080/10584589908228469 – ident: CIT0010 doi: 10.1016/S0254-0584(98)00090-X – ident: CIT0005 doi: 10.1103/PhysRevLett.81.3014 |
| SSID | ssj0013449 |
| Score | 1.5274003 |
| Snippet | Metal-ferroelectric-silicon (MFS) structures were fabricated by a layer transfer process and direct wafer bonding (DWB) and by direct deposition of... |
| SourceID | proquest crossref informaworld |
| SourceType | Aggregation Database Enrichment Source Publisher |
| StartPage | 169 |
| SubjectTerms | direct wafer bonding interface trap density metal-ferroelectric-silicon structures TEM analysis |
| Title | Direct wafer bonding and layer transfer-a new approach to integration of ferroelectric oxides into silicon technology |
| URI | https://www.tandfonline.com/doi/abs/10.1080/00150199908014527 https://search.proquest.com/docview/26939115 |
| Volume | 231 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV07T8MwELagEhIMPAqI8vTAhBSRl5t4YEDQqhMLRbBF59iRKlUJShzRn8_ZaQqlqAMsiRRd7Ch3vvts330m5BoixBwsTh0MdpkTQpo5gvs4a42U5BAo4YKpRh49R09v8ePA0OTctbUwJq3SzKGzhijC-mozuEFUbUbcraXFM-XzrqE-Yb6pJccnxqbHw9evPYRwDn49k57Gg3ZP87cWlqLSEmfpio-2gWe4989P3ie7c8RJ7xsTOSAbKu-SnW88hF2yZfNA0-qQ1I0LpB-QqZKKwta8UOyWTgHBOdUW56rSAYp4nLaM5FQXtCWeQEXTIqMoVBbNITuTlBaziVSVkSloNZmi-eVUL1b1j8jLcDB-GDnzkxmc1OeuxqvLIIx5rLivGEjDO-j5IFkkmfJYKkKe-hHemABXAurcMzwzQijgOB3PgmPSyYtcnRDqIiLsq9DWCIcoxyUiHIDUE54I0D_0yE2rmeS9IeBIvAWv6Y-_2iPud90l2q56ZM0RJaviiZ7pHmFrXgnWdHXV2kWCI9Jss0CuirpK_D4PMISw0z-2fEa259wQaLbnpKPLWl2QzUrWl9bAPwH0Kfkl |
| link.rule.ids | 315,782,786,1455,1509,27933,27934,58021,59734,60523 |
| linkProvider | Taylor & Francis |
| linkToHtml | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV07T8MwED5BEQIGHgVEedUDE1JEXm7iBQlBqyJKF4pgi-zEkSpVCWpS0Z_P2UlKS1EHWJLlYke-891n--4zwBX3EHNQPzQw2MWGy8PYEMzGVasnI8YdKUyuqpG7L17_3X9oK5qc26oWRqVVqjV0XBBFaF-tJrfajK5S4m40L56qnzcV9wm1vXXYQGDsKO78Qeft-xTBLeGvpRLUmFOdav7WxEJcWmAtXfLSOvR09v770_uwW4JOcldYyQGsyaQOO3NUhHXY1KmgYXYIk8ILkk8eyzERqS57IdgvGXHE5yTXUFeODU4QkpOKlJzkKam4J1DXJI0JCo3T4p6dYUjS6TCSmZJJSTYcoQUmJJ9t7B_Ba6c9uO8a5eUMRmgzM8enSbnrM18yW1IeKepBy-YR9SIqLRoKl4W2hy8quBlxVLulqGaEkJzhijx2jqGWpIk8AWIiKGxJV5cJuyjHIgQ5nIeWsISDLqIB15Vqgo-CgyOwZtSmP0a1Aea88oJcb3zExS0ly-JBPs0bQFd84qzoqlkZRoCTUp208ESmkyywW8zBKEJP_9hyE7a6g-de0HvsP53BdkkVgTZ8DrV8PJEXsJ5Fk0tt7V-q7_1J |
| linkToPdf | http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LS8NAEB60oujBt1hf3YMnIZjXNt2DB7GWilIEK3oLu9kNFEpSkhT7853dNLVV6UEvyWWyCZnZmW92Z74FuOQBYg7aiiwMdrHl8yi2BHMxaw2UZNxTwua6G7n7EvTeW-17TZNzU_XC6LJKnUPHJVGE8dV6co9kXFXEXRtaPN0-b2vqE-oGq7DWtMuMqt95-9pE8Kfo19H1acyrNjV_G2IhLC2Qlv5w0ibydHb--c27sD2FnOS2tJE9WFHJPmzNERHuw7opBI3yAxiXPpB88FhlRKSm6YXga8mQIzonhQG6KrM4QUBOKkpyUqSkYp5ATZM0JiiUpeUpO4OIpJOBVLmWSUk-GKL9JaSYLesfwmvnvn_XtaZHM1iRy-wCrzblfou1FHMV5VITDzoulzSQVDk0Ej6L3ABvVHBbclS6o4lmhFCcYT4ee0dQS9JEHQOxERI2lW-ahH2UYxIhDueRIxzhoYOow1WlmXBUMnCEzozY9NtfrYM9r7uwMMsecXlGyU_xsJgUdaBLHvGWvKpR2UWIU1Lvs_BEpeM8dJvMwxhCT_44cgM2ntud8Omh93gKm1OeCLTgM6gV2Vidw2ouxxfG1j8BidX77Q |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Direct+wafer+bonding+and+layer+transfer-a+new+approach+to+integration+of+ferroelectric+oxides+into+silicon+technology&rft.jtitle=Ferroelectrics&rft.au=Alexe%2C+M.&rft.au=Senz%2C+St&rft.au=Pignolet%2C+A.&rft.au=Hesse%2C+D.&rft.date=1999-06-01&rft.pub=Taylor+%26+Francis+Group&rft.issn=0015-0193&rft.eissn=1563-5112&rft.volume=231&rft.issue=1&rft.spage=169&rft.epage=178&rft_id=info:doi/10.1080%2F00150199908014527&rft.externalDocID=8014527 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0015-0193&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0015-0193&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0015-0193&client=summon |