The silicon cryosar at microwave frequencies
Microwave and low-frequency measurements are reported on n^{+}-v-n^{+} silicon cryosars fabricated with narrow intrinsic region widths. The low-frequency measurements include V-I data with and without incident microwave power. The electric field required to cause impact ionization of the donors was...
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| Published in: | IEEE transactions on electron devices Vol. 26; no. 6; pp. 966 - 970 |
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| Main Authors: | , |
| Format: | Journal Article |
| Language: | English |
| Published: |
IEEE
01-06-1979
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| Online Access: | Get full text |
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| Summary: | Microwave and low-frequency measurements are reported on n^{+}-v-n^{+} silicon cryosars fabricated with narrow intrinsic region widths. The low-frequency measurements include V-I data with and without incident microwave power. The electric field required to cause impact ionization of the donors was found to be greater than 10 5 V/m. The microwave measurements include a demonstration of mixing, harmonic mixing, and harmonic generation. Small-signal impedance measurements as a function of bias are reported at 1.33 and 3.05 GHz, and the diode noise temperature was measured to be 16 000 or 3000 K depending on bias polarity. Mobile electron lifetime is 10 -10 s. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1979.19526 |