X-ray diffraction topography for materials science

• Published in: Crystallography reports Vol. 57; no. 5; pp. 661 - 669
• Main Authors: Shul’pina, I. L., Prokhorov, I. A.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-09-2012
• Subjects: Crystallography and Scattering Methods; Physics; Physics and Astronomy; GaSb; Crystallography Report; Misfit Dislocation; Crystallization Front; Dislocation Loop
• ISSN: 1063-7745; 1562-689X
• DOI: 10.1134/S106377451205015X

In this paper, which is dedicated to the 100th anniversary of the discovery of X-ray diffraction (which occurs in 2012), the role and significance of X-ray diffraction topography for materials science are described. The basic principles, methods, and history of the development of X-ray topography (XRT) are briefly stated. A wide experience of practical application of XRT to study the mechanisms of formation of real structure in bulk single crystals and thin films is summarized. Examples of the application of topography methods for investigating and optimizing the production technology of a variety of practically important materials and microelectronic devices are presented.