Selective Area Growth of Semipolar ($20\bar{2}1$) and ($20\bar{2}\bar{1}$) GaN Substrates by Metalorganic Vapor Phase Epitaxy

• Published in: Japanese Journal of Applied Physics Vol. 52; no. 8; pp. 08JC06 - 08JC06-4
• Main Authors: Jinno, Daiki, Ma, Bei, Miyake, Hideto, Hiramatsu, Kazumasa, Enatsu, Yuuki, Nagao, Satoru
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01-08-2013
• Subjects: Anisotropy; Gallium nitrides; Masks; Metalorganic vapor phase epitaxy; Silicon dioxide; Voids
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.52.08JC06

We carried out the selective area growths of GaN on semipolar ($20\bar{2}1$), ($20\bar{2}\bar{1}$), and related non- and semi-polar GaN substrates by metalorganic vapor phase epitaxy. By changing the growth parameters and directions of the SiO 2 stripe mask, the differences in GaN structures between the growths on the different substrates were investigated. In the case of the stripes $\parallel$ $a$-axis, anisotropic GaN structures with ($000\bar{1}$) and ($10\bar{1}1$) facets were obtained for all the non- and semi-polar GaN substrates. On the other hand, in the case of the stripes $\perp$ $a$-axis, isotropic GaN structures were obtained for the ($20\bar{2}1$) and ($20\bar{2}\bar{1}$) GaN substrates. However, the GaN structures between them were quite different. After 120 min of growth, $\{11\bar{2}0\}$ and ($20\bar{2}\bar{1}$) facets markedly expanded for the ($20\bar{2}1$) and ($20\bar{2}\bar{1}$) GaN substrates, respectively. Moreover, by exploiting the effect of growth temperature, the growth of a continuous ($20\bar{2}\bar{1}$) GaN layer with voids was realized.