Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates

• Published in: Technical physics letters Vol. 34; no. 8; pp. 711 - 713
• Main Authors: Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Kokin, S. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Chalyĭ, V. P., Shkurko, A. P.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-08-2008
• Subjects: Classical and Continuum Physics; Physics; Physics and Astronomy; 71.55.Eq; 74.78.Fk; 81.16.-c; 81.15.-z
• ISSN: 1063-7850; 1090-6533
• DOI: 10.1134/S1063785008080269

Preliminary results on the transfer of the ammonia MBE technology of nitride transistor heterostructures to AlN/SiC substrates. The main device properties achieved previously with AlN/AlGaN/GaN/AlGaN multilayer heterostructures on sapphire are almost completely reproduced on the new base despite increased roughness of the initial AlN/SiC substrates as compared to sapphire. The saturation current of prototype field-effect transistors based on the nitride heterostructures grown on AlN/SiC substrates are comparable with the analogous parameter of devices grown on sapphire and exhibits no decrease related to thermal scattering at high bias voltages.